List of semiconductor fabrication plants

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This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by Pure Play foundries, that manufacture designs from fabless companies and do not design their own ICs. Some Pure Play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

Glossary of terms

  • Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
  • Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
  • Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
  • Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
  • Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants

Operating fabs include:

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (mm) Process technology node (nm) Production capacity (Wafers/Month) Technology / products
UMC - He Jian Fab 8N China China,
Suzhou 		0.750,[1] 1.2, +0.5 2003, May[1] 200 4000–1000, 500, 350, 250, 180, 110 77,000 Foundry
UMC Fab 6A Taiwan Taiwan,
Hsinchu 		0.35[1] 1989[1] 150 450 31,000 Foundry
UMC Fab 8AB Taiwan Taiwan,
Hsinchu 		1[1] 1995[1] 200 250 67,000[2] Foundry
UMC Fab 8C Taiwan Taiwan,
Hsinchu 		1[1] 1998[1] 200 350–110 37,000 Foundry
UMC Fab 8D Taiwan Taiwan,
Hsinchu 		1.5[1] 2000[1] 200 90 31,000 Foundry
UMC Fab 8E Taiwan Taiwan,
Hsinchu 		0.96[1] 1998[1] 200 180 37,000 Foundry
UMC Fab 8F Taiwan Taiwan,
Hsinchu 		1.5[1] 2000[1] 200 150 40,000 Foundry
UMC Fab 8S Taiwan Taiwan,
Hsinchu 		0.8[1] 2004[1] 200 350–250 31,000 Foundry
UMC Fab 12A Taiwan Taiwan,
Tainan 		4.65, 4.1, 6.6, 7.3[1] 2001, 2010, 2014, 2017[1] 300 28, 14 87,000[2] Foundry
UMC Fab 12i Singapore Singapore 3.7[1] 2004[1] 300 130–40 53,000 Foundry
UMC - USJC (formerly MIFS) (formerly Fujitsu) Fab 12M (original Fujitsu installations)[3] Japan Japan,
Mie Prefecture 		1974 150, 200, 300[4] 90–40 33,000 Foundry
Texas Instruments (formerly National Semiconductor) MFAB[5] United States USA,
Maine Maine,
South Portland 		.932 1997 200 350, 250, 180
Texas Instruments DHC United States USA,
Texas Texas,
Dallas 		2019[6] Foundry
Texas Instruments DBUMP United States USA,
Texas Texas,
Dallas 		2018[7] Foundry
Tsinghua Unigroup[8] China China,
Nanjing 		10 (first phase), 30 Planned 300 100,000 (first phase) 3D NAND Flash
Tsinghua Unigroup - XMC (formerly Xinxin)[9] Fab 1 China China,
Wuhan[1] 		1.9 2008 300 90, 65, 60, 50, 45, 40, 32 30,000[10] Foundry, NOR
Tsinghua Unigroup - Yangtze Memory Technologies (YMTC) - XMC (formerly Xinxin)[9][10][8] Fab 2 China China,
Wuhan 		24 2018[1] 300 20 200,000 3D NAND
SMIC S1 Mega Fab (S1A/S1B/S1C)[11] China China,
Shanghai 		200 350–90 110,000[12] Foundry
SMIC S2 (Fab 8)[11] China China,
Shanghai 		300 45/40–32/28 20,000[12] Foundry
SMIC - SMSC SN1[11] China China,
Shanghai 		10 (expected) (planned) 300 12 / 14 Foundry
SMIC B1 Mega Fab (Fab 4, Fab 6)[11] China China,
Beijing 		2004 300 180–90/55 48,000[12] Foundry
SMIC B2A[11] China China,
Beijing 		3.59[13] 2014 300 45/40–32/28 19,000[12] Foundry
SMIC Fab 7[11] China China,
Tianjin 		2004 200 350–90 45,000[12] Foundry
SMIC Fab 15[11] China China,
Shenzhen 		2014 200 350–90 31,000[12] Foundry
SMIC[9] B3 China China,
Beijing 		7.6 Under construction 300 35,000 Foundry
Wuxi Xichanweixin (formerly SMIC - LFoundry [de]) (formerly LFoundry [de]) (formerly Micron)[14] (formerly Texas Instruments) LF Italy Italy,
Abruzzo Abruzzo,
Avezzano 		1995 200 180–90 40,000
Nanya Fab 2 Taiwan Taiwan,
Linkou 		0.8 2000 200[15] 175 30,000 DRAM
Nanya Fab 3A[16] Taiwan Taiwan,
New Taipei City[17] 		1.85[18] 2018 300 20 DRAM
MESA+ Institute NANOLAB Netherlands Netherlands,
Enschede 		Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics
(future Texas Instruments) Micron (formerly IM Flash) Fab 2 IMFT United States USA,
Utah Utah,
Lehi 		300 25[19] 70,000 DRAM, 3D XPoint
Micron Fab 4[20] United States USA,
Idaho Idaho,
Boise 		300 RnD
Micron (formerly Dominion Semiconductor) Fab 6 United States USA,
Virginia Virginia,
Manassas 		1997 300 25[19] 70,000 DRAM, NAND FLASH, NOR
Micron (formerly TECH Semiconductor) Fab 7 (formerly TECH Semiconductor, Singapore)[21] Singapore Singapore 300 60,000 NAND FLASH
Micron (formerly IM Flash)[22] Fab 10[23] Singapore Singapore 3 2011 300 25 100,000 NAND FLASH
Micron (formerly Inotera) Fab 11[24] Taiwan Taiwan,
Taoyuan 		300 20 and under 80,000 DRAM
Micron Fab 13[25] Singapore Singapore 200 NOR
Micron Singapore Singapore[26] 200 NOR Flash
Micron Micron Semiconductor Asia Singapore Singapore[26]
Micron China China,
Xi'an[26]
Micron (formerly Elpida Memory) Fab 15 (formerly Elpida Memory, Hiroshima)[20][26] Japan Japan,
Hiroshima 		300 20 and under 100,000 DRAM
Micron (formerly Rexchip) Fab 16 (formerly Rexchip, Taichung)[20] Taiwan Taiwan,
Taichung 		300 30 and under 80,000 DRAM, FEOL
Micron (formerly Cando) Micron Memory Taiwan[26] Taiwan Taiwan,
Taichung 		?, 2018 300 DRAM, BEOL
Micron A3 Taiwan Taiwan,
Taichung[27] 		Under construction 300 DRAM
Intel D1B United States USA,
Oregon Oregon,
Hillsboro 		1996 300 10 / 14 / 22 Microprocessors[28]
Intel D1C[29][28] United States USA,
Oregon Oregon,
Hillsboro 		2001 300 10 / 14 / 22 Microprocessors[28]
Intel D1D[29][28] United States USA,
Oregon Oregon,
Hillsboro 		2003 300 7 / 10 / 14 Microprocessors[28]
Intel D1X[30][28] United States USA,
Oregon Oregon,
Hillsboro 		2013 300 7 / 10 / 14 Microprocessors[28]
Intel Fab 12[29][28] United States USA,
Arizona Arizona,
Chandler 		1996 300 14 / 22 / 65 Microprocessors & chipsets[28]
Intel Fab 32[29][31] United States USA,
Arizona Arizona,
Chandler 		3 2007 300 45
Intel Fab 32[29][28] United States USA,
Arizona Arizona,
Chandler 		2007 300 22 / 32 Microprocessors[28]
Intel Fab 42[32][33][28] United States USA,
Arizona Arizona,
Chandler 		10[34] 2020[35] 300 7 / 10 Microprocessors[28]
Intel Fab 52, 62[36][37] United States USA,
Arizona Arizona,
Chandler 		20[36] 2024[36] Microprocessors[36]
Intel Fab 11x[29][28] United States USA,
New Mexico New Mexico,
Rio Rancho 		2002 300 32 / 45 Microprocessors[28]
Intel (formerly Micron) (formerly Numonyx) (formerly Intel) Fab 18[38] Israel Israel,
Southern District,
Kiryat Gat 		1996 200, 300 45 / 65 / 90 / 180 Microprocessors and chipsets,[39] NOR flash
Intel Fab 10[29] Republic of Ireland Ireland,
County Kildare,
Leixlip 		1994 200
Intel Fab 14[29] Republic of Ireland Ireland,
County Kildare,
Leixlip 		1998 200
Intel Fab 24[29][28] Republic of Ireland Ireland,
County Kildare,
Leixlip 		2004 300 14 / 65 / 90[40] Microprocessors, Chipsets and Comms[28]
Intel Fab 28[29][28] Israel Israel,
Southern District,
Kiryat Gat 		2008 300 10 / 22 / 45 Microprocessors[28]
Intel Fab 68[29][41] China China,
Dalian 		2.5 2010 300 65[42] 30,000–52,000 Microprocessors (former), VNAND[28]
Intel Costa Rica Costa Rica,
Heredia,
Belén 		1997 300 14 / 22 Packaging
Tower Semiconductor (formerly Maxim) (formerly Philips) (formerly VLSI) Fab 9[43][44] United States USA,
Texas Texas,
San Antonio 		2003 200 180 Foundry, Al BEOL, Power, RF Analog
Tower Semiconductor (formerly National Semiconductor) Fab 1[45] Israel Israel,
Northern District,
Migdal HaEmek 		0.235[1] 1989, 1986[1] 150 1000–350 14,000 Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
Tower Semiconductor Fab 2[45] Israel Israel,
Northern District,
Migdal HaEmek 		1.226[1] 2003 200 180–130 51,000[1] Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) Fab 3,[45] Newport Beach[1] United States USA,
California California,
Newport Beach 		0.165[1] 1967, 1995[1] 200 130–500 25,000[1] Foundry, Al BEOL, SiGe, EPI
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 5,[45] Tonami[46] Japan Japan,
Tonami 		1994 200 500–130 Foundry, Analog/Mixed-Signal, Power, Discrete, NVM, CCD
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 7,[45] Uozu[46] Japan Japan,
Uozu 		1984 300 65. 45 Foundry, CMOS, CIS, RF SOI, Analog/Mixed-Signal
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 6,[45] Arai[46] Japan Japan,
Arai 		1976 200 130–110 Foundry, Analog/Mixed-Signal, CIS, NVM,Thick Cu RDL
Nuvoton[47] Fab2 Taiwan Taiwan 150 350–1000 nm 45,000[47] Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
ISRO SCL[48] India India,
Mohali 		2006 200 180 MEMS, CMOS, CCD, N.S.
STAR-C[49][50] MEMS[50] India India,
Bangalore 		1996 150 1000–500 MEMS
STAR-C[49][50] CMOS[50] India India,
Bangalore 		1996 150 1000–500 CMOS
GAETEC[49][51] GaAs[51] India India,
Hyderabad 		1996 150 700–500 MESFET
BAE Systems (formerly Sanders) United States USA,
New Hampshire New Hampshire,
Nashua[1] 		1985[1] 100, 150 140, 100, 70, 50 MMIC, GaAs, GaN-on-SiC, foundry
Qorvo (formerly RF Micro Devices) United States USA,
North Carolina North Carolina,
Greensboro[52] 		100,150 500 8,000 SAW filters, GaAs HBT, GaAs pHEMT, GaN
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) United States USA,
Texas Texas,
Richardson[52] 		0.5 1996 100, 150, 200 350, 250, 150, 90 8,000 DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC
Qorvo (formerly TriQuint Semiconductor) United States USA,
Oregon Oregon,
Hillsboro[52] 		100, 150 500 Power amps, GaAs
Apple (formerly Maxim) (formerly Samsung) X3[53] United States USA,
California California,
San Jose 		?, 1997, 2015[54] 600–90
Analog Devices (formerly Maxim Integrated) MaxFabNorth[55] United States USA,
Oregon Oregon,
Beaverton
Rohm[56] (formerly Renesas) Shiga Factory Japan Japan 200 150 IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[56][57] Miyasaki Japan Japan 150 MEMS
Rohm (Lapis Semiconductor)[56] Building No.1 Japan Japan 1961[58] Transistors
Rohm (Lapis Semiconductor)[56] Building No.2 Japan Japan 1962[58] Transistors
Rohm (Lapis Semiconductor)[56] Building No.3 Japan Japan 1962[58] Transistors
Rohm (Lapis Semiconductor)[56] Building No.4 Japan Japan 1969[58] Transistors
Rohm (Lapis Semiconductor)[56] Chichibu Plant Japan Japan 1975[58] DRAM
Rohm (Lapis Semiconductor)[56] VLSI Laboratory No. 1 Japan Japan 1977[58] VLSI
Rohm (Lapis Semiconductor)[56] VLSI Laboratory No. 2 Japan Japan 1983[58]
Rohm (Lapis Semiconductor)[56] VLSI Laboratory No. 3 Japan Japan 1983[58] DRAM
Rohm (Lapis Semiconductor)[56] Oregon Plant United States USA,
Oregon Oregon 		1990[58]
Rohm (Lapis Semiconductor)[56] Thailand Thailand 1992[58]
Rohm (Lapis Semiconductor)[56] ULSI Laboratory No. 1 Japan Japan 1992[58] 500 DRAM
Rohm (Kionix)[59] Ithaca United States USA,
New York (state) New York,
Ithaca 		150 MEMS
Rohm (Kionix)[59] (formerly Renesas Kyoto) Kyoto Japan Japan,
Kyoto 		200 MEMS
Oki Electric Industry[60] Japan Japan,
Tokyo,
Minato-ku 		1961 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[60] Miyazaki Oki Electric Co 1981 100, 150, 130, 76 3000 7,200 Bipolar, Mask ROM, DRAM[58]
Oki Electric Industry[60] Miyagi Facility 1988[58] 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[60] Hachioji Facility 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[61] 150 180–150 SoCs, LSI, Logic, Memory
Fuji Electric[62] Omachi Japan Japan,
Nagano Prefecture
Fuji Electric[63] Iyama Japan Japan,
Nagano Prefecture
Fuji Electric[64] Hokuriku Japan Japan,
Toyama prefecture
Fuji Electric[65] Matsumoto Japan Japan,
Nagano prefecture
Fujitsu Kawasaki Japan Japan,
Kawasaki 		1966[66]
Fujitsu[67][68] Fab B1 (at Mie)[69] Japan Japan, 1500 Tadocho Mizono, Kuwana, Mie[70] 2005 300 65, 90 15,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Fujitsu[67][68] Fab B2 (at Mie)[69] Japan Japan, 1500 Tadocho Mizono, Kuwana, Mie[70] 1 (total)[71] 2007, July 300 65, 90 25,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[72]
Fujitsu[67][68] Japan Japan, 1500 Tadocho Mizono, Kuwana, Mie[70] 2015 300 40[73] 5,000 Foundry
Fujitsu Kumagaya Plant[69] Japan Japan,
Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 		1974
Fujitsu[74] Suzaka Plant Japan Japan,
Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Fujitsu Iwate Plant[75][4] Japan Japan,
Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
Denso (formerly Fujitsu)[76] Denso Iwate[77][78][79] Japan Japan,
Iwate Prefecture, Kanegasaki-cho 		0.088 Under construction, 2019, May (planned) Semiconductor wafers and sensors (since June 2017)
Canon Inc. Oita[80] Japan Japan
Canon Inc. Kanagawa[81] Japan Japan
Canon Inc. Ayase[80] Japan Japan
Sharp Corporation Fukuyama[82] Japan Japan
Japan Semiconductor

[83]

Iwate Japan Japan
Japan Semiconductor[83] Oita Japan Japan
Kioxia Yokkaichi Operations[84][85] Japan Japan,
Yokkaichi 		1992 173,334[86][87][88][89] Flash Memory
Kioxia/SanDisk Y5 Phase 1 (at Yokkaichi Operations) Japan Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[90] 2011 Flash
Kioxia/SanDisk Y5 Phase 2[90] (at Yokkaichi Operations) Japan Japan,
Mie 		2011 300 15[91] Flash
Kioxia[92] Y3 (at Yokkaichi Operations) Japan Japan,
Yokkaichi 		300 NAND Memory
Kioxia[93] Y4 (at Yokkaichi Operations) Japan Japan,
Yokkaichi 		2007 300 NAND Memory
Kioxia[94] Kaga Toshiba Japan Japan,
Ishikawa 		Power semiconductor devices
Kioxia[95] Oita Operations Japan Japan,
Kyushu
Kioxia[96][97] Y6 (phase 1) (at Yokkaichi Operations)[98] Japan Japan,
Yokkaichi 		1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[99][85] 2018 300 BiCS FLASH™
Kioxia[96][97] Y6 (phase 2) (at Yokkaichi Operations) Japan Japan,
Yokkaichi 		1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[99][85] Planned 300 BiCS FLASH™
Kioxia[96][97] Y7 Japan Japan,
Yokkaichi 		4.6[100][101] Planned 300 BiCS FLASH™
Kioxia[96] Y2 (at Yokkaichi Operations) Japan Japan,
Yokkaichi 		1995 3D NAND
Kioxia[102][103] New Y2 (at Yokkaichi Operations) Japan Japan,
Yokkaichi 		2016, July 15 300 3D NAND
Kioxia[104][105][106][107] K1 Japan Japan,
Iwate Prefecture 		Under Construction 300 3D NAND
Western Digital[108][109]
Hitachi[110] Rinkai Factory Japan Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221 MEMS Foundry
Hitachi[110] Haramachi Factory Japan Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 Power semiconductors
Hitachi[110] Yamanashi Factory Japan Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 Power semiconductors
ABB[111] Lenzburg Switzerland Switzerland,
Aargau Aargau,
Lenzburg 		0.140 2010 (second phase) 130, 150 18,750 (225,000 per year) High power semiconductors, diodes, IGBT, BiMOS
ABB[111] (formerly Polovodiče a.s.)[112] Czech Republic Czech Republic, Prague High power semiconductors, diodes[113]
Mitsubishi Electric[114] Power Device Works, Kunamoto Site Japan Japan Power semiconductors
Mitsubishi Electric[114] Power Device Works, Fukuoka Site Japan Japan,
Kunamoto Prefecture,
Fukuoka City[115] 		Power semiconductors and sensors[115]
Mitsubishi Electric[116] High frequency optical device manufacturing plant Japan Japan,
Hyogo Prefecture[116] 		High frequency semiconductor devices (GaAsFET, GaN, MMIC)[116]
Powerchip Semiconductor Memory Foundry, Fab P1[117][118] Taiwan Taiwan,
Hsinchu 		2.24[1] 2002[1] 300 90, 70, 22[119] 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P2[118] Taiwan Taiwan,
Hsinchu,
Hsinchu Science Park 		1.86[1] 2005[1] 300 90, 70, 22[119] 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerly Macronix) Fab P3[118] Taiwan Taiwan,
Hsinchu,
Hsinchu Science Park 		300 90, 70, 22[119] 20,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerly ProMOS) ProMOS Fab 4[120][121] Taiwan Taiwan,
Taichung 		1.6 300 70
Macronix (formerly ProMOS)[122] Fab 5 300 50,000
Macronix[122] Fab 2 200 48,000
(future Foxconn) Macronix[122] Fab 1 150 40,000
Renesas[123] Naka Factory Japan Japan 2009 300 28[124]
Renesas (formerly Trecenti) Japan Japan[125][126] 300 180, 90, 65 Foundry
Renesas[123] Takasaki Factory Japan Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas[123] Shiga Factory Japan Japan, 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555
Renesas[123] Yamaguchi Factory Japan Japan, 20192–3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298
Renesas[123] Kawashiri Factory Japan Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861-4195
Renesas[123] Saijo Factory Japan Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501
Renesas[123] Musashi Site Japan Japan, 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo, 187-8588
Renesas (formerly NEC Electronics) (formerly NEC) Roseville[127][128] United States USA,
California California,
Roseville 		1.2[129] 2002, April 200 RAM, SoCs, Multimedia Chips
Renesas - Intersil[123] 1 Murphy Ranch Rd United States USA,
California California,
Milpitas
Integrated Device Technology United States USA,
Oregon Oregon,
Hillsboro 		1997 200 140–100[130]
NEC[60] 100, 130, 150 SRAM, DRAM
NEC[131] Japan Japan DRAM
TSI Semiconductors[132] (formerly Renesas) Roseville fab, M-Line, TD-Line, K-Line[133][1] United States USA,
California California,
Roseville 		1992, 1985[1] 200
TDK - Micronas FREIBURG[134][135] Germany Germany,
19 D-79108, Hans-Bunte-Strasse
TDK (formerly Renesas) Tsuruoka Higashi[136][137] 125[138]
TDK Japan Japan,
Saku[139]
TDK - Tronics United States USA,
Texas Texas,
Addison[140]
Silanna (formerly Sapphicon Semiconductor) Australia Australia,
New South Wales New South Wales,
Sydney[1] 		0.030 1965,1989[1] 150
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) Australia Australia,
New South Wales New South Wales,
Sydney

[141]

150 500, 250 RF CMOS, SOS, foundry
Murata Manufacturing[142] Nagano[138] Japan Japan 0.100 SAW filters[138]
Murata Manufacturing[142] Otsuki[138] Japan Japan
Murata Manufacturing[142] Kanazawa Japan Japan 0.111 SAW filters[138]
Murata Manufacturing (formerly Fujifilm)[143][144] Sendai Japan Japan,
Miyagi Prefecture 		0.092[138] MEMS[145]
Murata Manufacturing[143] Yamanashi Japan Japan,
Yamanashi Prefecture
Murata Manufacturing[146] Yasu Japan Japan,
Shiga Prefecture,
Yasu
Murata Electronics (Finland)[147] (formerly VTI, since 1979 Vaisalas int. semicon. line)[148] Vantaa Finland Finland 2012,[149] expanded 2019[150] 3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.[151]
Mitsumi Electric[152] Semiconductor Works #3 Japan Japan,
Atsugi Operation Base 		2000
Mitsumi Electric[152] Japan Japan,
Atsugi Operation Base 		1979
Sony[153] Kagoshima Technology Center Japan Japan,
Kagoshima 		1973 Bipolar CCD, MOS, MMIC, SXRD
Sony[153] Oita Technology Center Japan Japan,
Oita 		2016 CMOS Image Sensor
Sony[153] Nagasaki Technology Center Japan Japan,
Nagasaki 		1987 MOS LSI, CMOS Image Sensors, SXRD
Sony[153] Kumamoto Technology Center Japan Japan,
Kumamoto 		2001 CCD Image Sensors, H-LCD, SXRD
Sony[153] Shiroishi Zao Technology Center Japan Japan,
Shiroishi 		1969 Semiconductor Lasers
Sony Sony Shiroishi Semiconductor Inc. Japan Japan,
Miyagi 		Semiconductor Lasers[154]
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[153][155][156] Yamagata Technology Center Japan Japan,
Yamagata 		2014 CMOS Image Sensor, eDRAM (formerly)
MagnaChip F-5[157] 2005 200 130
SK Hynix[158] China China,
Chongqing
SK Hynix[158] China China,
Chongqing
SK Hynix[159][160] South Korea South Korea,
Cheongju,
Chungcheongbuk-do 		Under construction[161] NAND Flash
SK Hynix[160] South Korea South Korea,
Cheongju 		Under construction NAND Flash
SK Hynix HC1 China China,
Wuxi 		300 100,000[9] DRAM
SK Hynix HC2 China China,
Wuxi 		300 70,000[9] DRAM
SK Hynix[160] M16 South Korea South Korea,
Incheon 		3.13 (13.4 total planned) 2021 (planned) 300 10 (EUV) 15,000-20,000 (initial) DRAM
LG Innotek[162] Paju South Korea South Korea,
570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 		LED Epi-wafer, Chip, Package
Diodes Incorporated[163] (formerly Zetex Semiconductors) OFAB United Kingdom UK,
England England,
Greater Manchester Greater Manchester,
Oldham 		150
Diodes Incorporated (formerly BCD Semi)[164] China China 150 4000–1000
Diodes Incorporated[165] (formerly ON Semiconductor) (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) SPFAB United States USA,
Maine Maine,
South Portland 		1960–1997 200 350
Lite-On Optoelectronics[166] China China,
Tianjin
Lite-On Optoelectronics[166] Thailand Thailand,
Bangkok Bangkok
Lite-On Optoelectronics[166] China China,
Jiangsu
Lite-On Semiconductor[167] Keelung Plant Taiwan Taiwan,
Keelung 		1990 100 Thyristor, DIscrete
Lite-On Semiconductor[167] Hsinchu Plant Taiwan Taiwan,
Hsinchu 		2005 Bipolar BCD, CMOS
Lite-On Semiconductor[167] Lite-On Semi (Wuxi) China China,
Jiangsu 		2004 100 Discrete
Lite-On Semiconductor[167] Wuxi WMEC Plant China China,
Jiangsu 		2005 Discrete, Power, Optical ICs
Lite-On Semiconductor[167] Shanghai (SSEC) Plant China China,
Shanghai 		1993 76 Fab, Assembly
Trumpf[168] (formerly Philips Photonics) Germany Germany,
Baden-Württemberg Baden-Württemberg,
Ulm 		VCSEL
Philips[169] Netherlands Netherlands,
North Brabant North Brabant,
Eindhoven 		200,150 30,000 R&D, MEMS
Newport Wafer Fab[170] (formerly Infineon Technologies) FAB11 United Kingdom UK,
Wales Wales,
Newport 		200[171] 180–700[171] 32,000[171] Foundry, Compound Semiconductors, IC, MOSFET, IGBT[172]
Nexperia (formerly NXP Semiconductors) (formerly Philips) Hamburg site[173] Germany Germany,
Hamburg Hamburg 		1953 200 35,000 Small-signal and bipolar discrete devices
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) Manchester[173] United Kingdom UK,
England England,
Greater Manchester Greater Manchester,
Stockport 		1987? 150, 200 24,000 GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors (formerly Philips) ICN8 Netherlands Netherlands,
Gelderland Gelderland,
Nijmegen 		200 40,000+[174] SiGe
NXP Semiconductors Japan Japan[60] Bipolar, Mos, Analog, Digital, Transistors, Diodes
NXP Semiconductors - SSMC SSMC Singapore Singapore 1.7[1] 2001[1] 200 120 53,000 SiGe
NXP Semiconductors - Jilin Semiconductor China China,
Jilin 		130
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Oak Hill Fab[175] United States USA,
Texas Texas,
Austin 		.8[176] 1991 200 250
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Chandler Fab[177] United States USA,
Arizona Arizona,
Chandler[178] 		1.1[179] +0.1 (GaN) 1993 150 (GaN), 200 180 GaN-on-SiC pHEMT
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) ATMC[180] United States USA,
Texas Texas,
Austin 		1995 200 90
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) MOTOFAB1[181] Mexico Mexico,
Jalisco Jalisco,
Guadalajara 		2002
AWSC Taiwan Taiwan,
Tainan[1] 		1999[1] 150 12,000 Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP
Skyworks Solutions[182] (formerly Conexant) (formerly Rockwell) United States USA,
California California,
Newbury Park 		100, 150 Compound Semiconductors (GaAs, AlGaAs, InGaP)
Skyworks Solutions[182] (formerly Alpha Industries) United States USA,
Massachusetts Massachusetts,
Woburn 		100, 150 RF/cellular components (SiGe, GaAs)
Skyworks Solutions[182] Japan Japan,
Osaka 		SAW, TC-SAW Filters
Skyworks Solutions[182] Japan Japan,
Kadoma 		SAW, TC-SAW Filters
Skyworks Solutions[182] Singapore Singapore,
Bedok South Road 		SAW, TC-SAW Filters
Win Semiconductor Fab A[183] Taiwan Taiwan,
Taoyuan City 		150[184] 2000–10 Foundry, GaAs
Win Semiconductor Fab B[183] Taiwan Taiwan,
Taoyuan City 		150[184] 2000–10 Foundry, GaAs, GaN
Win Semiconductor Fab C Taiwan Taiwan,
Taoyuan[1] 		0.050, 0.178 2000, 2009[1] 150 Foundry, GaAs
ON Semiconductor (formerly Truesense Imaging, Kodak) Rochester United States USA,
New York (state) New York,
Rochester[185] 		CCDs and Image Sensors
ON Semiconductor (formerly LSI) Gresham[186] United States USA,
Oregon Oregon,
Gresham 		200 110
ON Semiconductor (formerly AMI Semiconductor) Pocatello[187] United States USA,
Idaho Idaho,
Pocatello 		1997[188] 200 350
ON Semiconductor (formerly Sanyo)[189][190] Niigata Japan Japan,
Niigata 		130, 150 350
ON Semiconductor (formerly Fujitsu)[191][192] Aizu Wakamatsu Plant[193] Japan Japan,
Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 		1970[66] 150, 200[194][195][196][197] Memory, Logic
ams[198] FAB B Austria Austria,
Styria Styria,
Unterpremstätten 		200 350
Osram (Osram Opto Semiconductors) Malaysia Malaysia,
Kulim,
Kulim Hi-Tech Park 		0.350, 1.18[199] 2017, 2020 (second phase, planned)[200][201] 150 LEDs
Osram (Osram Opto Semiconductors) Malaysia Malaysia,
Penang[202][203] 		2009 100 LEDs
Osram (Osram Opto Semiconductors) Germany Germany,
Bavaria Bavaria,
Regensburg[204] 		2003, 2005 (second phase)[205] LEDs
Winbond Memory Product Foundry[206] Taiwan Taiwan,
Taichung 		300 46
Winbond CTSP Site[207][208] Taiwan Taiwan,
No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881 		300
Winbond[209] Planned 300
Vanguard International Semiconductor Fab 1 Taiwan Taiwan,
Hsinchu 		0.997[1] 1994[1] 200 55,000 Foundry
Vanguard International Semiconductor (formerly Winbond) Fab 2 (formerly Fab 4&5)[210] Taiwan Taiwan,
Hsinchu 		0.965[1] 1998[1] 200 55,000 Foundry
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) Fab 3E[211] Singapore Singapore 1.3[1] 200 180 34,000 Foundry
TSMC Fab 2[212] Taiwan Taiwan,
Hsinchu 		0.735[1] 1990[1] 150 88,000[213][1] Foundry
TSMC Fab 3 Taiwan Taiwan,
Hsinchu 		2[1] 1995[1] 200 100,000[1] Foundry
TSMC Fab 5 Taiwan Taiwan,
Hsinchu 		1.4[1] 1997[1] 200 48,000[1] Foundry
TSMC Fab 6 Taiwan Taiwan,
Tainan 		2.1[1] 2000, January; 2001[125] 200, 300 180–? 99,000[1] Foundry
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[214][215][216] Fab 7[217] Taiwan Taiwan 200 350, 250, 220, 180 33,000 Foundry (current)

DRAM (former), Logic (former)

TSMC (formerly WSMC) Fab 8 Taiwan Taiwan,
Hsinchu 		1.6[1] 1998[1] 200 250, 180 85,000[1] Foundry
TSMC (formerly WSMC)[126] 2000 200 250, 150 30,000 Foundry
TSMC China Company Fab 10 China China,
Shanghai 		1.3[1] 2004[1] 200 74,000 Foundry
TSMC Fab 12 Taiwan Taiwan,
Hsinchu 		5.2, 21.6 (total, all phases combined)[1] 2001[1] 300 150–28 77,500–123,800 (all phases combined)[1] Foundry
TSMC Fab 12 (P4) Taiwan Taiwan,
Hsinchu 		6[1] 2009[1] 300 20 40,000[1] Foundry
TSMC Fab 12 (P5) Taiwan Taiwan,
Hsinchu 		3.6[1] 2011[1] 300 20 6,800[1] Foundry
TSMC Fab 12 (P6) Taiwan Taiwan,
Hsinchu 		4.2[1] 2013[1] 300 16 25,000 Foundry
TSMC Fab 14 Taiwan Taiwan,
Tainan 		5.1[1] 2002,[125] 2004[1] 300 20 82,500[1] Foundry
TSMC Fab 14 (B) Taiwan Taiwan,
Tainan 		300 16 50,000+[218] Foundry
TSMC Fab 14 (P3)[1] Taiwan Taiwan,
Tainan 		3.1[1] 2008[1] 300 16 55,000[1] Foundry
TSMC Fab 14 (P4)[1] Taiwan Taiwan,
Tainan 		3.750[1] 2011[1] 300 16 45,500[1] Foundry
TSMC Fab 14 (P5)[1] Taiwan Taiwan,
Tainan 		3.650[1] 2013[1] 300 16 Foundry
TSMC Fab 14 (P6)[1] Taiwan Taiwan,
Tainan 		4.2[1] 2014[1] 300 16 Foundry
TSMC Fab 14 (P7)[1] Taiwan Taiwan,
Tainan 		4.850[1] 2015[1] 300 16 Foundry
TSMC Fab 15[219] Taiwan Taiwan,
Taichung 		9.3 2011 300 20 100,000+(166,000 estimate)[220][218][221] Foundry
TSMC Fab 15 (P1)[1] Taiwan Taiwan,
Taichung 		3.125[1] 2011 300 4,000[1] Foundry
TSMC Fab 15 (P2)[1] Taiwan Taiwan,
Taichung 		3.150[1] 2012[1] 300 Foundry
TSMC Fab 15 (P3)[1] Taiwan Taiwan,
Taichung 		3.750[1] 2013[1] 300 Foundry
TSMC Fab 15 (P4)[1] Taiwan Taiwan,
Taichung 		3.800[1] 2014[1] 300 Foundry
TSMC Fab 15 (P5)[1] Taiwan Taiwan,
Taichung 		9.020[1] 2016[1] 300 35,000 Foundry
TSMC Fab 18 (P1-P3) Taiwan Taiwan,
Southern Taiwan Science Park[222][223] 		17.08 2020 (P7 under construction) 300 5[224] 120,000 Foundry
TSMC Fab 18 (P4-P6) Taiwan Taiwan,
Southern Taiwan Science Park 		2022 (planned), under construction 300 3[9][225][226] 120,000 Foundry
TSMC Fab 21 United States USA,
Arizona Arizona,
Phoenix 		12[227] Q1 2024 (planned), P1 under construction[227][228] 300 5 & 4[228] 20,000[228] Foundry
Epistar Fab F1[229] Taiwan Taiwan,
Longtan Science Park 		LEDs
Epistar Fab A1[229] Taiwan Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N2[229] Taiwan Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N8[229] Taiwan Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N1[229] Taiwan Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N3[229] Taiwan Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N6[229] Taiwan Taiwan,
Chunan Science Park 		LEDs
Epistar Fab N9[229] Taiwan Taiwan,
Chunan Science Park 		LEDs
Epistar Fab H1[229] Taiwan Taiwan,
Central Taiwan Science Park 		LEDs
Epistar Fab S1[229] Taiwan Taiwan,
Tainan Science Park 		LEDs
Epistar Fab S3[229] Taiwan Taiwan,
Tainan Science Park 		LEDs
Epistar (formerly TSMC)[230][231][232] Taiwan Taiwan,
Hsin-Chu Science Park 		0.080 2011, second half LEDs
Lextar T01 Taiwan Taiwan,
Hsinchu Science Park 		LEDs
GCS United States USA,
California California,
Torrance[1] 		1999[1] 100 6,400 Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs
Bosch Germany Germany,
Baden-Württemberg Baden-Württemberg,
Reutlingen 		1995[233] 150 ASIC, analog, power, SiC
Bosch Germany Germany,
Saxony Saxony,
Dresden 		1.0[234] 2021 300 65
Bosch WaferFab Germany Germany,
Baden-Württemberg Baden-Württemberg,
Reutlingen 		0.708[235] 2010[233] 200 30,000 ASIC, analog, power, MEMS
STMicroelectronics AMK8 (second, newer fab) Singapore Singapore,
Ang Mo Kio 		1995 200
STMicroelectronics (formerly SGS Microelettronica) AMJ9 (first fab) Singapore Singapore,
Ang Mo Kio 		1984[236] 150, 200 6" 14 kpcs/day, 8" 1.4 kpcs/day Power-MOS/ IGBT/ bipolar/ CMOS
X-Fab Erfurt Germany Germany,
Thuringia Thuringia,
Erfurt 		1985[1] 200[237] 600–1000[237] 11200–[237] Foundry
X-Fab (formerly ZMD) Dresden Germany Germany,
Saxony Saxony,
Dresden 		0.095[1] 1985[1] 200[238] 350–1000[238] 6000–[238] Foundry, CMOS, GaN-on-Si
X-Fab (formerly Itzehoe) Itzehoe Germany Germany,
Schleswig-Holstein Schleswig-Holstein,
Itzehoe 		200[239] 13000–[239] Foundry, MEMS
X-Fab (formerly 1st Silicon)[240][241] Kuching Malaysia Malaysia,
Kuching 		1.89[1] 2000[1] 200[242] 130–350[242] 30,000–[242] Foundry
X-Fab (formerly Texas Instruments) Lubbock United States USA,
Texas Texas,
Lubbock 		0.197[1] 1977[1] 150, 200[243] 600–1000[243] 15000–[243] Foundry, SiC
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[244] ACL-AMF France France,
Île-de-France Île-de-France,
Corbeil-Essonnes 		1991, 1964[1] 200 130–350 Foundry, CMOS, RF SOI
IXYS Germany Germany,
Hesse Hesse,
Lampertheim[245] 		IGBT[245]
IXYS United Kingdom UK,
England England,
Wiltshire Wiltshire,
Chippenham[245]
IXYS United States USA,
Massachusetts Massachusetts[245]
IXYS United States USA,
California California[245]
Samsung V1-Line[246] South Korea South Korea,
Hwaseong 		6 2020, February 20 300 7 Microprocessors, Foundry
Samsung S3-Line[247] South Korea South Korea,
Hwaseong 		10.2, 16.2 (planned)[248][249] 2017[248] 300 10 200,000 DRAM, VNAND, Foundry
Samsung S2-Line[250] United States USA,
Texas Texas,
Austin 		16[251][252] 2011 300 65–11 92,000 Microprocessors, FDSOI, Foundry, NAND[253]
Samsung S1-Line[254] South Korea South Korea,
Giheung 		33 (total) 2005 (second phase), 1983 (first phase)[255][256] 300 65–7 62,000 Microprocessors, S.LSI, LEDs, FDSOI, Foundry[257]
Samsung Pyeongtaek[258][259][248] South Korea South Korea,
Pyeongtaek 		14.7, 27 (total)[260][252][261][262][263][264][265][161] 2017, July 6 300 14 450,000[266] V-NAND, DRAM, Foundry
Samsung 6 Line[267] South Korea South Korea,
Giheung 		200 180–65 Foundry
Samsung Samsung China Semiconductor[268] China China,
Shaanxi Province 		DDR Memory
Samsung Samsung Suzhou Research Center (SSCR)[254] China China,
Suzhou,
Suzhou Industrial Park 		DDR Memory
Samsung Onyang Complex[268] South Korea South Korea,
Chungcheongnam-do 		display.backend process.test
Samsung F1x1[269][248] China China,
Xian 		2.3[270] 2014 (first phase, second phase is under review)[248] 300 20 100,000 VNAND
Samsung Giheung Campus[271] South Korea South Korea,
Gyeonggi-do,
Yongin 		LEDs
Samsung Hwasung Campus[271] South Korea South Korea,
Gyeonggi-do,
Hwaseong 		LEDs
Samsung Tianjin Samsung LED Co., Ltd.[271] China China,
Tianjin,
Xiqing 		LEDs
Seagate United States USA,
Minnesota Minnesota,
Minneapolis[272]
Seagate United Kingdom UK,
Northern Ireland[273][274][275][276]
Broadcom Limited (Previously Avago) United States USA,
Colorado Colorado,
Fort Collins[277]
Cree Inc.[278] Durham United States USA,
North Carolina North Carolina,
Durham 		Compound Semiconductors, LEDs
Cree Inc.[279] Research Triangle Park United States USA,
North Carolina North Carolina 		GaN HEMT RF ICs
SMART Modular Technologies Brazil Brazil,
São Paulo,
Atibaia 		2006 Packaging
Changxin Memory Technologies China China 7.2 2019 300 19, 17 125,000 DRAM[280]
Infineon Technologies Villach Austria Austria,
Carinthia Carinthia,
Villach 		1970[281] 100/150/200/300 MEMS, SiC, GaN
Infineon Technologies Dresden Germany Germany,
Saxony Saxony,
Dresden 		3[282] 1994–2011[283] 200/300 90
Infineon Technologies Kulim[284] Malaysia Malaysia,
Kulim 		2006[285] 200/300 50,000
Infineon Technologies Kulim 2 Malaysia Malaysia,
Kulim 		2015 200/300 50,000
Infineon Technologies Regensburg[286] Germany Germany,
Bavaria Bavaria,
Regensburg 		1959
Infineon Technologies Cegled[287] Hungary Hungary,
Pest County Pest,
Cegléd
Infineon Technologies El Segundo United States USA,
California California,
El Segundo[288]
D-Wave Systems[289] Superconducting Foundry[290] Quantum Processing Units (QPUs)[290]
GlobalFoundries (formerly AMD) Fab 1 Module 1[291] Germany Germany,
Saxony Saxony,
Dresden 		3.6[1] 2005 300 22–45 35,000[1] Foundry, SOI, FDSOI
GlobalFoundries (formerly AMD) Fab 1 Module 2 Germany Germany,
Saxony Saxony,
Dresden 		4.9[1] 1999 300 22–45 25,000[1] Foundry, SOI
GlobalFoundries Fab 1 Module 3 Germany Germany,
Saxony Saxony,
Dresden 		2.3[1] 2011[1] 300 22–45 6,000[1] Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 2[211] Singapore Singapore 1.3[1] 1995[1] 200 350–600 56,000[1] Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 3/5[211] Singapore Singapore 0.915, 1.2[1] 1997, 1995[1] 200 180–350 54,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 6[211] (merged into Fab 7) Singapore Singapore 1.4[1] 2000[1] 200, 300 (merged) 110–180 45,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 7[291] Singapore Singapore 4.6[1] 2005[1] 300 40, 65, 90, 110, 130 50,000 Foundry, Bulk CMOS, RF SOI
GlobalFoundries Fab 8[291] United States USA,
New York (state) New York,
Malta 		4.6, 2.1, 13+ (total)[292][293] 2012, 2014[1] 300 12 / 14 / 22 / 28 60,000 Foundry, High-K Metal Gate,[294] SOI FinFET
GlobalFoundries Technology Development Center[1] United States USA,
New York (state) New York,
Malta 		1.5[1] 2014[1] (future ON Semiconductor) GlobalFoundries (formerly IBM)[295][296][297] Fab 10 United States USA,
New York (state) New York,
East Fishkill 		2.5, +.29 (future)[292] 2002 300 90–22, 14 12,000-15,000[292] Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh
SUNY Poly CNSE NanoFab 300 North[298] United States USA,
New York (state) New York,
Albany 		.175, .050 2004, 2005 300 65, 45, 32, 22
SUNY Poly CNSE NanoFab 200[299] United States USA,
New York (state) New York,
Albany 		.016 1997 200
SUNY Poly CNSE NanoFab Central[298] United States USA,
New York (state) New York,
Albany 		.150 2009 300 22
Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH) United States USA,
Texas Texas,
Austin[1][300] 		0.065 1989[1] 200 10,000 MEMS, photonics, foundry
Opto Diode United States USA,
California California,
Camarillo[301]
Optek Technology[60] 1968 100, 150 GaAs, LEDs
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR

NORTHERN TELECOM EUROPE[60]) (formerly JDS Uniphase) (formerly Uniphase)

Semiconductor Lasers, Photodiodes
Infinera United States USA,
California California,
Sunnyvale[302][303]
Rogue Valley Microdevices[304][305][306] United States USA,
Oregon Oregon,
Medford 		2003 50.8mm to 300mm MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D
Atomica Fab 1 United States USA,
California California,
Goleta 		2000 150, 200 350 20,000 Foundry: MEMS, Photonics, Sensors, Biochips
Sensera uDev-1 United States USA,
Massachusetts Massachusetts,
Woburn 		2014 150 700 1,000 MEMS, MicroDevice assembly
Rigetti Computing Fab-1[307][308][309] United States USA,
California California,
Fremont 		130 Quantum Processors
NHanced Semiconductors[310] MNC United States USA,
North Carolina North Carolina,
Morrisville 		2001 100, 150, 200 >=500 1000 MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging
Polar Semiconductor[311] FAB 1,2,3 United States USA,
Minnesota Minnesota,
Bloomington 		200 BCD, HV, GMR
Orbit Semiconductor[60] 100 CCD, CMOS
Entrepix United States USA,
Arizona Arizona,
Tempe[1] 		2003[1]
Medtronic United States USA,
Arizona Arizona,
Tempe[1] 		1973[1]
Technologies and Devices International United States USA,
Florida Florida,
Silver Springs[1] 		2002[1]
Soraa Inc United States USA,
California California[312][313]
Soraa Laser Diode[312]
Mirrorcle Technologies United States USA,
California California,
Richmond[314]
HTE LABS HTE LABS United States USA,
California California,
San Jose 		0.005 2009 100, 150 4000–1000 1,000 Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
HT Micron Brazil Brazil,
Rio Grande do Sul Rio Grande do Sul,
São Leopoldo 		2014 DRAM, eMCP, iMCP
Unitec do Brasil Brazil Brazil,
Minas Gerais Minas Gerais,
Ribeirão das Neves 		Planned
Unitec Blue[315] Argentina Argentina,
Buenos Aires Province Buenos Aires Province,
Chascomús 		0.3 (1.2 planned)[316] 2013 RFID, SIM, EMV
Everlight Yuan-Li Plant Taiwan Taiwan,
Miao-Li 		LEDs
Everlight Pan-Yu Plant China China LEDs
Everlight Tu-Cheng Plant Taiwan Taiwan,
Taipei Country 		LEDs
Optotech[317] Taiwan Taiwan,
Hsinchu 		LEDs
Arima Optoelectronics Taiwan Taiwan,
Hsinchu[1] 		1999[1]
Episil Semiconductor Taiwan Taiwan,
Hsinchu[1] 		1992, 1990, 1988[1]
Episil Semiconductor Taiwan Taiwan,
Hsinchu[1] 		1992, 1990, 1988[1]
Creative Sensor Inc.[318][319] NanChang Creative Sensor China China,
Jiangxi 		2007 Image Sensors
Creative Sensor Inc.[318] Wuxi Creative Sensor China China,
JiangSu 		2002
Creative Sensor Inc.[318] Wuxi Creative Sensor Taiwan Taiwan,
Taipei City 		1998
Visera Technologies[320] Headquarters Phase I Taiwan Taiwan,
Hsinchu Science-based Industrial Park 		2007, September CMOS Image Sensors
Panjit Taiwan Taiwan,
Kaohsiung[1] 		0.1 2003[1]
Nanosystem Fabrication Facility Hong Kong Hong Kong[321]
ASMC[322] FAB 1/2 China China,
Shanghai 		1992, 1997[1] 200 600 78,000[1] BCD, HV
ASMC[322] FAB 3 China China,
Shanghai 		2004[1] 200 250 12,000[1]
Beilling[323] China China,
Shanghai 		150 1200 BiCMOS, CMOS
SiSemi[324] China China,
Shenzhen,
Longgang High-tech Industrial Park[325] 		2004 130 Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi[325] 1997 100 Transistors
CRMicro (formerly CSMC)[326] Fab 1 1998[1] 150[327] 60,000[1] HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC) Fab 2 China China,
Wuxi 		2008[1] 200[327] 180, 130 40,000[1] HV Analog, Foundry
CRMicro (formerly CSMC) Fab 3 1995[1] 200[327] 130 20,000[1]
CRMicro (formerly CSMC) Fab 5 2005[1] 30,000[1]
Nexchip[9] N1[328] China China,
Hefei 		Q4 2017 300 40,000 Display Drivers IC[329]
Nexchip[9] N2[328] China China,
Hefei 		Under construction 300 40,000
Nexchip[9] N3[328] China China,
Hefei 		Under construction 300 40,000
Nexchip[9] N4[328] China China,
Hefei 		Under construction 300 40,000
Wandai[9] CQ China China,
Chongqing 		Under construction 300 20,000
San'an Optoelectronics Tianjin San'an Optoelectronics Co., Ltd. China China, Tianjin LEDs
San'an Optoelectronics Xiamen San'an Optoelectronics Technology Co., Ltd. China China LEDs
San'an Optoelectronics Xiamen San'an Integrated Circuit China China ICs
San'an Optoelectronics Xiamen San'an Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Fujian Jing'an Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Wuhu Anrui Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Anrui San'an Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Anrui San'an Technology Co., Ltd. China China LEDs
San'an Optoelectronics Luminus Summary United States USA LEDs
San'an[330] China China,
Xiamen 		Foundry, GaN, Power, RF
Hua Hong Semiconductor HH Fab7 China China, Wuxi 300 90-55 60,000[331] Foundry
Hua Hong Semiconductor HH Fab1 China China,
Shanghai, Jinqiao 		200 95 65,000[331] Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor HH Fab2 China China,
Shanghai, Zhangjiang 		200 180 60,000[331] Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor HH Fab3 China China,
Shanghai, Zhangjiang 		200 90 53,000[331] Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HuaLei Optoelectronic China China LEDs[332]
Sino King Technology[8] China China,
Hefei 		2017 DRAM
APT Electronics China China,
Guangzhou[1] 		2006[1]
Aqualite China China,
Guangzhou[1] 		2006[1]
Aqualite China China,
Wuhan[1] 		2008[1]
Xiamen Jaysun Semiconductor Manufacturing Fab 101 China China,
Xiamen[1] 		0.035 2011[1]
Xiyue Electronics Technology Fab 1 China China,
Xian[1] 		0.096 2007[1]
Hanking Electronics Fab 1 China China,
Fushun 		2018 200 10,000 - 30,000 MEMS Foundry,

MEMS Design

MEMS Sensors (Inertial, Pressure, Ultrasound,
Piezoelectric, LiDar, Bolometer )

IoT Motion Sensors

CanSemi[333] China China,
Guangzhou 		4 300 180–130 Foundry[334]
SensFab Singapore Singapore[1] 1995[1]
MIMOS Semiconductor Malaysia Malaysia,
Kuala Lumpur[1] 		0.006, 0.135 1997, 2002[1]
Silterra Malaysia Fab1 Malaysia Malaysia,
Kedah,
Kulim 		1.6 2000 200 250, 200, 180–90 46,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory 111 Factory North Korea North Korea,
Pyongyang 		1980s 3000[335]
DongbuHiTek Fab 1 South Korea South Korea,
Bucheon[1] 		1997[1] Foundry
DongbuHiTek Fab 2 South Korea South Korea,
Eumsung-Kun[1] 		2001[1] Foundry
DongbuHiTek Fab 2 Module 2 South Korea South Korea,
Eumsung-Kun[1] 		Foundry
Kodenshi AUK Group[336] Silicon FAB Line
Kodenshi AUK Group[336] Compound FAB Line
Kyocera SAW devices[138]
Seiko Instruments[337] China China,
Shanghai
Seiko Instruments[337] Japan Japan,
Akita
Seiko Instruments[337] Japan Japan,
Takatsuka
NIPPON PRECISION CIRCUITS[60] Digital
Epson[338] T wing Japan Japan,
Sakata 		1997 200 150–350 25,000
Epson[338] S wing Japan Japan,
Sakata 		1991 150 350–1200 20,000
Olympus Corporation[339] Nagano Japan Japan,
Nagano Prefecture 		MEMS[340]
Olympus Japan Japan MEMS[341]
Shindengen Electric Manufacturing[342] Philippines Philippines,
Laguna,
Calamba
Shindengen Electric Manufacturing[342] Thailand Thailand,
Lamphun
NKK JFE Holdings[60] 200 6000 ,
New Japan Radio Kawagoe Works Japan Japan,
Saitama Prefecture,
Fujimino City[343][344] 		1959[60] 100, 150 4000, 400, 350 Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[345]

New Japan Radio Saga Electronics[346] Japan Japan,
Saga Prefecture 		100, 150 4000, 400, 350[347] Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[345]

New Japan Radio NJR FUKUOKA Japan Japan,
Fukuoka Prefecture,
Fukuoka City[346] 		2003[348] 100, 150 Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio Japan Japan,
Nagano,
Nagano City[349]
New Japan Radio Japan Japan,
Nagano,
Ueda City[349]
Nichia YOKOHAMA TECHNOLOGY CENTER[350] Japan Japan,
KANAGAWA 		LEDs
Nichia SUWA TECHNOLOGY CENTER[350] Japan Japan,
NAGANO 		LEDs
Taiyo Yuden Japan Japan,
Nagano 		SAW devices[138]
Taiyo Yuden Japan Japan,
Ome 		SAW devices[138]
NMB SEMICONDUCTOR[60] DRAM
Elmos Semiconductor Germany Germany,
North Rhine-Westphalia North Rhine-Westphalia,
Dortmund[351] 		1984 200 800, 350 9000 HV-CMOS
United Monolithic Semiconductors[352] Germany Germany,
Baden-Württemberg Baden-Württemberg,
Ulm 		100 700, 250, 150, 100 Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode
United Monolithic Semiconductors[352] France France,
Île-de-France Île-de-France,
Villebon-sur-Yvette 		100 Foundry, BEOL
Innovative Ion Implant France France,
Provence-Alpes-Côte d'Azur Provence-Alpes-Côte d'Azur,
Peynier 		51–300[353]
Innovative Ion Implant United Kingdom UK,
Scotland Scotland,
Bathgate 		51–300[353]
nanoPHAB Netherlands Netherlands,
North Brabant North Brabant,
Eindhoven 		50–100 10–50 2–10 MEMS
Micron Semiconductor Ltd.[354] Lancing United Kingdom UK,
England England,
West Sussex West Sussex,
Lancing 		Detectors
PragmatIC Semiconductor FlexLogIC 001 United Kingdom UK,
England England,
County Palatine of Durham Durham 		0.020 2018 200 Helvellyn 4,000 Flexible Semiconductor /

Foundry and IDM

PragmatIC Semiconductor FlexLogIC 002 United Kingdom UK,
England England,
County Palatine of Durham Durham 		0.050 2023 300 Helvellyn 15,000 Flexible Semiconductor /

Foundry and IDM

INEX Microtechnology United Kingdom UK,
England England,
Northumberland Northumberland,
Newcastle upon Tyne 		2014 150 Foundry
CSTG United Kingdom UK,
Scotland Scotland,
Glasgow[1][355] 		2003[1] 76, 100 InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry
Photonix United Kingdom UK,
Scotland Scotland,
Glasgow[1] 		0.011 2000[1]
Silex Microsystems Sweden Sweden,
Stockholm County,
Järfälla[1] 		0.009, 0.032 2003, 2009[1]
Integral Belarus Belarus,
Minsk 		1963 100, 150, 200 2000, 1500, 350
VSP Mikron WaferFab[356] Russia Russia,
Voronezh Oblast Voronezh Oblast,
Voronezh 		1959 100/150 900+ 6000 Analog, power
Semikron Nbg Fab Germany Germany,
Nuremberg 		1984 150 3500 70000 Bipolar, Power Semiconductors

Number of open fabs currently listed here: 455

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed plants

Company Plant Name Plant Location Plant Cost (in US$ Billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) Technology / Products Ended Production
Latvia VEF Latvia Latvia,
Riga Riga 		1960 Semi-secret government semiconductor fab and a major research center closed by the collapse of the USSR to separate Latvia from the Russian military manufacturing complex. 1999
Tower Semiconductor (formerly Micron) Fab 4[357] Japan Japan,
Hyōgo Prefecture Hyōgo,
Nishiwaki 		0.450[1] 1992[1] 200 95 60,000[1] DRAM, foundry 2014
Tower Semiconductor - Tacoma China China,
Jiangsu,
Nanjing[358][359] 		halted, bankruptcy in June 2020[360] 200, 300 (planned) Foundry 2020
Fujian Jinhua (JHICC)[9][361][362][363] F2 China China,
Fujian,
Jinjiang 		5.65[364] 2018 (planned) 300 22 60,000 DRAM[8] 2018
Decoma[9] F2 China China,
Jiangsu,
Huai'an 		Under construction 300 20,000 2020
Wuhan Hongxin Semiconductor Manufacturing (HSMC)[365] China China,
Hubei,
Wuhan 		2019 (halted) 300 14, 7 Foundry 2020
Tsinghua Unigroup - Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[9] SZ China China,
Guangdong,
Shenzhen 		12.5 Planned 300 50,000 DRAM 2019 (just plan)
TSMC Fab 1[213] Taiwan Taiwan
Hsinchu County Hsinchu,
Baoshan 		1987 150 20,000 Foundry March 9, 2001
UMC Fab 1 Japan Japan,
Chiba Prefecture Chiba,
Tateyama 		0.543[1] 1997[1] 200 40,000 Foundry 2012
SK Hynix E-4 United States USA,
Oregon Oregon,
Eugene 		1.3 2007 200 30,000 DRAM 2008[366]
Symetrix - Panasonic[367] Brazil Brazil 0.9 (planned) planned FeRAM (just plan)
Rohm (formerly Data General) United States USA,
California California,
Sunnyvale[368]
Kioxia Fab 1 (at Yokkaichi Operations)[369] Japan Japan,
Mie Prefecture Mie,
Yokkaichi 		1992 200 400 35,000 SRAM, DRAM September, 2001
NEC Livingston[370] United Kingdom United Kingdom,
Scotland Scotland,
West Lothian,
Livingston 		4.5 (total) 1981 200 250, 180 30,000 DRAM April 2001
LFoundry [de] (formerly Renesas Electronics)[371] Germany Germany,
Bavaria Bavaria,
Landshut 		1992 200 2011
LFoundry [de] (formerly Atmel)[372] France France,
Bouches-du-Rhône Bouches-du-Rhône,
Rousset 		? 200 25.000[373]
Atmel (formerly Siemens) Fab 9[374] United Kingdom United Kingdom,
Tyne and Wear Tyne and Wear,
North Tyneside 		1.53[375] 1998[376] DRAM[376] 2007[377]
EI Niš Ei Poluprovodnici Serbia Serbia,
Nišava,
Niš 		1962 100 2000
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) United Kingdom UK,
Wiltshire Wiltshire,
Swindon[1]
Telefunken Semiconductors [de] Heilbronn, HNO-Line Germany Germany,
Baden-Württemberg Baden-Württemberg,
Heilbronn 		0.125[1] 1993[1] 150 10,000 2015
Qimonda Richmond[378] United States USA,
Virginia Virginia,
Richmond 		3 2005 300 65 38,000 DRAM January, 2009
STMicroelectronics (formerly Nortel[60]) 100, 150 NMOS, CMOS
Freescale Semiconductor (formerly Motorola) Toulouse Fab[379] France France,
Haute-Garonne Haute-Garonne,
Toulouse 		1969 150 650 Automotive 2012[380]
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) Sendai Fab[381] Japan Japan,
Miyagi Prefecture Miyagi,
Sendai 		1987 150, 200 500 DRAM, microcontrollers, analog, sensors 2009?
Agere (formerly Lucent) (formerly AT&T)[382] Spain Spain,
Community of Madrid Madrid,
Tres Cantos 		0.67[383] 1987[384] 300, 350, 500 CMOS 2001
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) United States USA,
Pennsylvania Pennsylvania,
Audubon 		1969
1976
1995 		1000 1976
1992[385]
2001
Integrated Device Technology United States USA,
California California,
Salinas 		1985 150 350–800[130] 2002
ON Semiconductor (formerly Cherry Semiconductor) United States USA,
Rhode Island Rhode Island,
Cranston 		2004
Intel Fab 8[38] Israel Israel,
Jerusalem District,
Jerusalem 		1985 150 Microprocessors, Chipsets, Microcontrollers[39] 2007
Intel Fab D2 United States USA,
California California,
Santa Clara 		1989 200 130 8,000 Microprocessors, Chipsets, Flash memory 2009
Intel Fab 17[29][28] United States USA,
Massachusetts Massachusetts,
Hudson 		1998 200 130 Chipsets and other[28] 2014
Fairchild Semiconductor (formerly National Semiconductor) West Jordan United States USA,
Utah Utah,
West Jordan 		1977 150 2015[386]
Texas Instruments HFAB United States USA,
Texas Texas,
Houston 		1967 150 2013[387]
Texas Instruments (formerly Silicon Systems) Santa Cruz United States USA,
California California,
Santa Cruz 		0.250 1980 150 800 80,000 HDD 2001
Texas Instruments (formerly National Semiconductor) Arlington United States USA,
Texas Texas,
Arlington 		1985 150 80000, 35000 2010
Unknown (fortune 500 company) United States USA,
East Coast[388] 		150 1,600 MEMS 2016
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) KFAB United States USA,
Missouri Missouri,
Lee's Summit 		1994[389] 130 2017[390]
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) United States USA,
Florida Florida,
Apopka[52][391] 		SAW filters 2019
GlobalFoundries Abu Dhabi[1] United Arab Emirates UAE,
Emirate of Abu Dhabi Emirate of Abu Dhabi,
Abu Dhabi[1] 		6.8[1] (planned) 2016[1] (planned) 300 110–180 45,000 Foundry 2011 (plan stopped)
GlobalFoundries - Chengdu China China,
Sichuan,
Chengdu[392] 		10 (planned) 2018 (planned), 2019 (second phase) 300 180/130 (cancelled), 22 (second phase) 20,000 (85,000 planned) Foundry, FDSOI (second phase) 2020 (was idle)
Tondi Elektroonika[393] A-1381 Soviet Union Soviet Union,
Estonia Estonia,
Harju,
Tallinn 		1958 Radio equipment, Transisors, Photodiode 1978
Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA) United States USA,
Ohio Ohio,
Findlay 		1954 Semiconductors, Optoelectronics, Integrated Circuits, Research[394] 2003[395]

Number of closed fabs currently listed here: 42

See also

References

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Samsung capacity

External links

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